WebMar 1, 2024 · High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and … WebHigh temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping.
Doped Mott insulator: Results from mean-field theory
WebThe quantum spin liquid candidate κ-(BEDT-TTF)2Cu2(CN)3 has been established as the prime example of a genuine Mott insulator that can be tuned across the first-order insulator–metal transition either by chemical substitution or by physical pressure. Here, we explore the superconducting state that occurs at low temperatures, when both methods … WebMay 8, 2012 · The Mott-Anderson transition has been known as a metal-insulator (MI) transition due to both strong electron-electron interaction and randomness of the electrons. For example, the MI transition in doped semiconductors and transition metal oxides has been investigated up to now as a typical example of the Mott-Anderson transition for … phipps supermarket chloe
Crystals Free Full-Text Simultaneous Control of Bandfilling and ...
WebFor small doping close to the Mott insulator such as p = 0.01, the resis-tivity first grows rapidly as T decreases and behaves like an insulator, but then falls and exhibits a broad peak at low temperatures. For larger doping, the resistivity turns metallic in the whole temperature window. WebJun 14, 2024 · The low value of the entropy near half-filling in the doped Mott insulator regime U > U M I T suggests that in this underdoped regime, singlets are more strongly bound by J = 4 t 2 / U than at larger doping. Third, the maximum in the entropy as a function of doping in the underlying normal state is completely obliterated by superconductivity. WebMar 17, 2024 · Selective area electron doping is demonstrated for archetypal Mott oxide electronic devices using insulator-metal transitions. This process enables monolithic integration of homotypic volatile threshold firing neurons and nonvolatile synapses for memory, providing a platform to implement Mott neuromorphic hardware for brain … phipps street burial ground